公开(公告)号：US20220165734A1

公开(公告)日：2022-05-26

申请号：US17666872

申请日：2022-02-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Seong LEE ,  Min Su KIM

IPC: H01L27/092 ,  H03K19/20 ,  H01L23/528 ,  H03K19/0948 ,  H03K3/356 ,  H03K3/3562 ,  H01L27/02 ,  H01L29/78

Abstract: A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.

公开(公告)号：US20240339454A1

公开(公告)日：2024-10-10

申请号：US18583125

申请日：2024-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul HWANG ,  Dae Seong LEE

IPC: H01L27/092 ,  G06F30/392 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L27/0922 ,  G06F30/392 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A standard cell includes a plurality of regions, which includes a first region including a first active region extending in a first direction and having a first width, a second region including a second active region extending in the first direction and having a second width greater than the first width, and a first gate electrode extending in a second direction perpendicular to the first direction, and a first transistor corresponding to at least a portion of the first active region and the first gate electrode includes a first channel having the first width, a second transistor corresponding to at least a portion of the second active region and the first gate electrode includes a second channel having the second width, and the first region and the second region contact in the second direction and have the same width with respect to the second direction.

公开(公告)号：US20180350815A1

公开(公告)日：2018-12-06

申请号：US16059562

申请日：2018-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Seong LEE ,  Min Su KIM

IPC: H01L27/092 ,  H01L29/78 ,  H03K19/0948 ,  H03K19/20 ,  H01L23/528 ,  H03K3/356 ,  H03K3/3562

CPC classification number: H01L27/0924 ,  H01L21/823828 ,  H01L21/823871 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/785 ,  H03K3/356156 ,  H03K3/35625 ,  H03K19/0948 ,  H03K19/20

Abstract: A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.

公开(公告)号：US20170244394A1

公开(公告)日：2017-08-24

申请号：US15427444

申请日：2017-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Kyum KIM ,  Dae Seong LEE ,  Min Su KIM

IPC: H03K3/356 ,  H01L27/105 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092

CPC classification number: H03K3/356156 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/1052

Abstract: A semiconductor device includes: first through fourth active regions spaced apart from one another; a first gate line disposed to overlap with the first and second active regions, but not with the third and fourth active regions, and to extend in a first direction; a second gate line disposed to overlap with the third and fourth active regions, but not with the first and second active regions, and to extend in the first direction while being spaced apart from the first gate line; and a dummy gate line disposed to overlap with the first through fourth active regions and a field region, to be spaced apart from the first and second gate lines in a second direction, and to extend in the first direction, wherein a signal input to the first or second active region is transmitted to the third or fourth active region.

公开(公告)号：US20170236823A1

公开(公告)日：2017-08-17

申请号：US15428308

申请日：2017-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Seong LEE ,  Min Su KIM

IPC: H01L27/092 ,  H03K19/0948 ,  H01L23/528 ,  H03K3/037 ,  H03K19/20

CPC classification number: H01L27/0924 ,  H01L21/823828 ,  H01L21/823871 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/785 ,  H03K3/356156 ,  H03K3/35625 ,  H03K19/0948 ,  H03K19/20

Abstract: A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.