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1.发明授权Memory system, method of programming the memory system, and method of testing the memory system 有权存储系统，存储器系统的编程方法以及测试存储器系统的方法公开(公告)号：US09437286B2
公开(公告)日：2016-09-06
申请号：US14616786
申请日：2015-02-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-Min Kang , Dae-Han Kim
CPC classification number: G11C16/10 , G11C7/02 , G11C11/5628 , G11C11/5642 , G11C16/0466 , G11C16/0483 , G11C16/12 , G11C16/3459 , G11C2029/1202 , G11C2029/5002 , G11C2211/5621
Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.
Abstract translation: 一种对存储器系统进行编程的方法包括重复执行用于所选存储器单元（其中N是等于或大于2的自然数）的N个程序循环。 N个程序循环中的每一个包括程序操作和程序验证操作。 N个程序循环中的至少一个包括通过将程序电压施加到所选择的存储器单元和至少一个另外选择的至少一个字线来对选择的存储器单元和至少一个另外选择的存储单元执行程序操作 存储单元被连接，并且通过对选择的存储器单元所连接的所选择的字线应用程序验证电压来对所选存储单元执行程序验证操作。
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2.发明授权公开(公告)号：US09646703B2
公开(公告)日：2017-05-09
申请号：US15236503
申请日：2016-08-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-Min Kang , Dae-Han Kim
CPC classification number: G11C16/10 , G11C7/02 , G11C11/5628 , G11C11/5642 , G11C16/0466 , G11C16/0483 , G11C16/12 , G11C16/3459 , G11C2029/1202 , G11C2029/5002 , G11C2211/5621
Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.
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