公开(公告)号：US20240315039A1

公开(公告)日：2024-09-19

申请号：US18483331

申请日：2023-10-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Gyeongsik EOM ,  Inho KIM ,  Chankyu KIM ,  Jumi YUN ,  Young-Ho LEE ,  Dasom JUNG ,  Wongi HONG

IPC分类号： H10B43/40 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

CPC分类号： H10B43/40 ,  H01L25/0652 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00 ,  H01L2225/06506

摘要： A semiconductor device includes a cell area, wherein the cell area includes: a cell array area; a connection area; a gate stacking structure including a plurality of gate electrodes, wherein the gate stacking structure includes an upper structure and a lower structure; a plurality of channel structures that penetrates the gate stacking structure in the cell array area; and a plurality of gate contact portions that penetrates the gate stacking structure in the connection area, wherein a bottom gate electrode in the cell array area is in a bottom portion of the upper structure and is adjacent to a channel structure among the plurality of channel structures, and wherein a bottom insulating portion in the connection area is in the bottom portion of the upper structure and is adjacent to a gate contact portion among the plurality of gate contact portions.