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    IMAGE SENSOR
    1.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20240395845A1

    公开(公告)日：2024-11-28

    申请号：US18796684

    申请日：2024-08-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong-Chul LEE ,  Beomsuk LEE ,  Minho JANG ,  Kwansik CHO

    IPC: H01L27/146

    Abstract: An image sensor includes a first chip including a pixel region, a pad region, and an optical black region interposed between the pixel region and the pad region, and a second chip being in contact with a first surface of the first chip and including circuits for driving the first chip. The first chip includes a first substrate, a device isolation portion disposed in the first substrate and defining unit pixels, an interlayer insulating layer interposed between the first substrate and the second chip, a connection wiring structure disposed in the interlayer insulating layer, and a connection contact plug disposed in the interlayer insulating layer and connecting the connection wiring structure to the device isolation portion in the optical black region. The image sensor further includes a conductive pad disposed in the first chip or the second chip.

    IMAGE SENSOR AND MANUFACTURING METHOD OF IMAGE SENSOR
    2.
    发明申请
    IMAGE SENSOR AND MANUFACTURING METHOD OF IMAGE SENSOR 有权

    公开(公告)号：US20240387585A1

    公开(公告)日：2024-11-21

    申请号：US18426734

    申请日：2024-01-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dohyun KWON ,  Sangchun PARK ,  Sungyong YOU ,  Dong-Chul LEE

    IPC: H01L27/146

    Abstract: An image sensor comprises a substrate that comprises a first surface, a second surface facing the first surface, and a plurality of pixel regions disposed along a first direction and a second direction. The sensor comprises a plurality of ground regions that are disposed within a portion of the substrate along a depth direction perpendicular to the first direction and the second direction from the first surface of the substrate. The sensor comprises a deep trench that extends from the first surface of the substrate to the second surface of the substrate. The sensor comprises a shallow trench that extends into the portion of the substrate along the depth direction from the first surface of the substrate and is disposed at an outer edge of at least a portion of the deep trench.

    IMAGE SENSOR
    3.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220149101A1

    公开(公告)日：2022-05-12

    申请号：US17377792

    申请日：2021-07-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong-Chul LEE ,  Beomsuk LEE ,  Minho JANG ,  Kwansik CHO

    IPC: H01L27/146

    Abstract: An image sensor includes a first chip including a pixel region, a pad region, and an optical black region interposed between the pixel region and the pad region, and a second chip being in contact with a first surface of the first chip and including circuits for driving the first chip. The first chip includes a first substrate, a device isolation portion disposed in the first substrate and defining unit pixels, an interlayer insulating layer interposed between the first substrate and the second chip, a connection wiring structure disposed in the interlayer insulating layer, and a connection contact plug disposed in the interlayer insulating layer and connecting the connection wiring structure to the device isolation portion in the optical black region. The image sensor further includes a conductive pad disposed in the first chip or the second chip.

    IMAGE SENSORS AND METHODS OF FABRICATING THE SAME
    4.
    发明申请
    IMAGE SENSORS AND METHODS OF FABRICATING THE SAME 有权
    图像传感器及其制作方法

    公开(公告)号：US20160035774A1

    公开(公告)日：2016-02-04

    申请号：US14813182

    申请日：2015-07-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： HyunPil Noh ,  Dong-Chul LEE ,  Seokha LEE ,  Chan PARK ,  Seungho SHIN

    IPC: H01L27/146 ,  H01L27/148

    CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689

    Abstract: An image sensor includes a photoelectric conversion element in a substrate, a first storage region spaced apart from the photoelectric conversion element in the substrate, a gate on the first storage region, a light shielding layer covering the gate, a dielectric layer disposed between the gate and the light shielding layer and extending onto a top surface of the substrate, an interlayer insulating structure covering the light shielding layer, and a micro-lens overlapping with the photoelectric conversion element on the interlayer insulating structure. The light shielding layer includes a first portion covering a sidewall of the gate, and a second portion on a top surface of the gate. The first portion has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion, and the first thickness is greater than a second thickness of the second portion.

    Abstract translation: 图像传感器包括基板中的光电转换元件，与基板中的光电转换元件间隔开的第一存储区域，第一存储区域上的栅极，覆盖栅极的遮光层，设置在栅极之间的介电层 并且遮光层延伸到基板的顶表面，覆盖遮光层的层间绝缘结构和与层间绝缘结构上的光电转换元件重叠的微透镜。 遮光层包括覆盖栅极侧壁的第一部分和栅极顶表面上的第二部分。 第一部分具有对应于从第一部分的底表面到第一部分的顶表面的垂直高度的第一厚度，并且第一厚度大于第二部分的第二厚度。

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