Abstract:
In a method of manufacturing a semiconductor device, a preliminary gate insulation layer is formed on a substrate, and at least a portion of the substrate serves as a channel region. A hydrogen plasma treatment is performed on the preliminary gate insulation layer to form a gate insulation layer, and the hydrogen plasma treatment supplying a hydrogen-containing gas and an inert gas supply in a chamber via different gas supply parts to form a hydrogen plasma region and an inert gas plasma region in the chamber, respectively. A gate electrode is formed on the gate insulation layer, and impurity regions are formed at upper portions of the substrate adjacent to the gate electrode.
Abstract:
A decorator mounting apparatus includes a housing; a display bracket coupled to the housing by a plurality of coupling parts; and a decorator mounted to the housing through coupling of the display bracket to the housing.
Abstract:
Provided is a method of manufacturing a transparent circuit substrate for a touch screen. The method may involve forming an electrode layer on a transparent substrate, stacking a light shielding layer on the transparent substrate such that the light shielding layer is located on an outside of the electrode layer, stacking a mask on the light shielding layer and the electrode layer, forming a conductive layer on the mask, forming connecting lines for connecting the electrode layer and connecting terminals by removing the mask and a portion of the conductive layer, and forming the connecting terminals on the light shielding layer such that the connecting terminals contact the connecting lines.