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公开(公告)号:US10431315B2
公开(公告)日:2019-10-01
申请号:US15825786
申请日:2017-11-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ji-Sang Lee , Ji-Ho Cho , Byung-Soo Kim , Dong-Jin Shin
Abstract: An operation method of a nonvolatile memory device for programming memory cells connected to a selected word line, the method including: performing a program operation; suspending the program operation after performing a first portion of the program operation; and resuming the program operation to perform a second portion of the program operation, wherein the program operation is resumed within a reference time after the program operation is suspended.
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公开(公告)号:US10910077B2
公开(公告)日:2021-02-02
申请号:US16561570
申请日:2019-09-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ji-Sang Lee , Ji-Ho Cho , Byung-Soo Kim , Dong-Jin Shin
Abstract: An operation method of a nonvolatile memory device for programming memory cells connected to a selected word line, the method including: performing a program operation; suspending the program operation after performing a first portion of the program operation; and resuming the program operation to perform a second portion of the program operation, wherein the program operation is resumed within a reference time after the program operation is suspended.
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公开(公告)号:US20190392910A1
公开(公告)日:2019-12-26
申请号:US16561570
申请日:2019-09-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ji-Sang Lee , Ji-Ho Cho , Byung-Soo Kim , Dong-Jin Shin
Abstract: An operation method of a nonvolatile memory device for programming memory cells connected to a selected word line, the method including: performing a program operation; suspending the program operation after performing a first portion of the program operation; and resuming the program operation to perform a second portion of the program operation, wherein the program operation is resumed within a reference time after the program operation is suspended.
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