公开(公告)号：US11307918B2

公开(公告)日：2022-04-19

申请号：US16594400

申请日：2019-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun chu Oh ,  Young-Sik Kim ,  Hee-hyun Nam ,  Young-geun Lee ,  Young-jin Cho

IPC: G06F11/07 ,  G06F11/14 ,  G06F11/34 ,  G11C11/409 ,  G11C11/408 ,  G06F13/16 ,  G11C29/52 ,  G11C11/16 ,  G11C13/00 ,  G11C29/04

Abstract: A memory system for performing a recovery operation is provided. A memory system includes a memory device including a plurality of memory cells constituting a plurality of sub-sets, and a memory controller for controlling the memory device. The memory controller controls the memory device to manage a read count indicating a number of read operations performed by the memory device for each of the plurality of sub-sets, and to perform a recovery operation on a sub-set, among the plurality of sub-sets, based on the read count corresponding to the read count. Each of a plurality of sub-sets includes a plurality of pages. Each of the plurality of pages is a unit in which a read operation is performed in the plurality of memory cells.

公开(公告)号：US20200159602A1

公开(公告)日：2020-05-21

申请号：US16594400

申请日：2019-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun chu Oh ,  Young-Sik Kim ,  Hee-hyun Nam ,  Young-geun Lee ,  Young-jin Cho

IPC: G06F11/07 ,  G06F11/14 ,  G06F11/34 ,  G06F13/16 ,  G11C11/409 ,  G11C11/408

Abstract: A memory system for performing a recovery operation is provided. A memory system includes a memory device including a plurality of memory cells constituting a plurality of sub-sets, and a memory controller for controlling the memory device. The memory controller controls the memory device to manage a read count indicating a number of read operations performed by the memory device for each of the plurality of sub-sets, and to perform a recovery operation on a sub-set, among the plurality of sub-sets, based on the read count corresponding to the read count. Each of a plurality of sub-sets includes a plurality of pages. Each of the plurality of pages is a unit in which a read operation is performed in the plurality of memory cells.