公开(公告)号：US20230406822A1

公开(公告)日：2023-12-21

申请号：US18209583

申请日：2023-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhye HWANG ,  Sunggi KIM ,  Yeonghun KIM ,  Gyunsang LEE ,  Jihyun LEE ,  Gyuhee PARK ,  Seung SON ,  Younjoung CHO ,  Byungkeun HWANG

IPC: C07D207/46 ,  C07D265/32 ,  C07D403/12 ,  H01L21/02

CPC classification number: C07D207/46 ,  C07D265/32 ,  C07D403/12 ,  H01L21/0214 ,  H01L21/02219 ,  H01L21/02216 ,  H01L21/0228

Abstract: A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1):


R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q,  Chemical Formula (1)



wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p≥1, m+n≤3, and p+q≤3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.

公开(公告)号：US20230407051A1

公开(公告)日：2023-12-21

申请号：US18206187

申请日：2023-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun LEE ,  Sunggi KIM ,  Yujin CHO ,  Sunhye HWANG ,  Seung SON ,  Gyunsang LEE ,  Younjoung CHO ,  Byungkeun HWANG

IPC: C08K5/5435 ,  C23C16/40 ,  C23C16/453 ,  H01L27/088 ,  H01L21/8234

CPC classification number: C08K5/5435 ,  C23C16/401 ,  C23C16/453 ,  H01L27/088 ,  H01L21/8234

Abstract: A silicon compound, a composition for depositing a silicon-containing film, a process of forming a silicon-containing film, and a method of manufacturing an integrated circuit device, the silicon compound is represented by Chemical Formula (1):