INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING SAME

    公开(公告)号:US20220181284A1

    公开(公告)日:2022-06-09

    申请号:US17513132

    申请日:2021-10-28

    Abstract: An integrated circuit device includes; a peripheral circuit structure including a peripheral circuit, a first insulating layer covering the peripheral circuit, extension lines in the first insulating layer, and a first bonding pad in the first insulating layer, and a cell array structure including a conductive plate, a memory cell array below the conductive plate, a second insulating layer covering the memory cell array, a second bonding pad in the second insulating layer, a conductive via on the conductive plate, and a line connected to the conductive via. The first bonding pad contacts the second bonding pad, and the integrated circuit device further includes contact plugs electrically connecting the line to the extension lines.

    MEMORY DEVICE INCLUDING ROW DECODERS

    公开(公告)号:US20220084579A1

    公开(公告)日:2022-03-17

    申请号:US17239655

    申请日:2021-04-25

    Abstract: A nonvolatile memory includes; a memory cell array including memory cells commonly connected to a first signal line, a first row decoder including a first pass transistor configured to provide a driving voltage to one end of the first signal line, and a second row decoder including a second pass transistor configured to provide the driving voltage to an opposing end of the first signal line. An ON-resistance of the first pass transistor is different from an ON-resistance of the second pass transistor. A first wiring line having a first resistance connects the first pass transistor and the one end of the first signal line and a second wiring line having a second resistance different from the first resistance connects the second pass transistor and the opposing end of the first signal line.

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