公开(公告)号：US20210288054A1

公开(公告)日：2021-09-16

申请号：US17032277

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJOON RYU ,  KWANYONG KIM ,  SEOGOO KANG ,  SUNIL SHIM ,  WONSEOK CHO ,  JEEHON HAN

IPC: H01L27/1157 ,  H01L23/522 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.

公开(公告)号：US20230180478A1

公开(公告)日：2023-06-08

申请号：US18103070

申请日：2023-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJOON RYU ,  YOUNGHWAN SON ,  SEOGOO KANG ,  JESUK MOON ,  JUNGHOON JUN ,  KOHJI KANAMORI ,  JEEHOON HAN

IPC: H10B43/35 ,  H10B43/40 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40

Abstract: A semiconductor device includes; gate layers stacked on a substrate, a channel layer extending through the gate layers, a string select gate layer disposed on the channel layer and a string select channel layer extending through the string select gate layer to contact the channel layer. The string select channel layer includes a first portion below the string select gate layer including a first protruding region, a second portion extending through the string select gate layer, and a third portion above the string select gate layer including a second protruding region.

公开(公告)号：US20230262984A1

公开(公告)日：2023-08-17

申请号：US18138189

申请日：2023-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJOON RYU ,  KWANYONG KIM ,  SEOGOO KANG ,  SUNIL SHIM ,  WONSEOK CHO ,  JEEHON HAN

IPC: H10B43/35 ,  H01L23/522 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40

CPC classification number: H10B43/35 ,  H01L23/5226 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40

Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.

公开(公告)号：US20210143160A1

公开(公告)日：2021-05-13

申请号：US16942456

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJOON RYU ,  YOUNGHWAN SON ,  SEOGOO KANG ,  JESUK MOON ,  JUNGHOON JUN ,  KOHJI KANAMORI ,  JEEHOON HAN

IPC: H01L27/1157 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor device includes; gate layers stacked on a substrate, a channel layer extending through the gate layers, a string select gate layer disposed on the channel layer and a string select channel layer extending through the string select gate layer to contact the channel layer. The string select channel layer includes a first portion below the string select gate layer including a first protruding region, a second portion extending through the string select gate layer, and a third portion above the string select gate layer including a second protruding region.