公开(公告)号：US20210288054A1

公开(公告)日：2021-09-16

申请号：US17032277

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJOON RYU ,  KWANYONG KIM ,  SEOGOO KANG ,  SUNIL SHIM ,  WONSEOK CHO ,  JEEHON HAN

IPC: H01L27/1157 ,  H01L23/522 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.

公开(公告)号：US20230180478A1

公开(公告)日：2023-06-08

申请号：US18103070

申请日：2023-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJOON RYU ,  YOUNGHWAN SON ,  SEOGOO KANG ,  JESUK MOON ,  JUNGHOON JUN ,  KOHJI KANAMORI ,  JEEHOON HAN

IPC: H10B43/35 ,  H10B43/40 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40

Abstract: A semiconductor device includes; gate layers stacked on a substrate, a channel layer extending through the gate layers, a string select gate layer disposed on the channel layer and a string select channel layer extending through the string select gate layer to contact the channel layer. The string select channel layer includes a first portion below the string select gate layer including a first protruding region, a second portion extending through the string select gate layer, and a third portion above the string select gate layer including a second protruding region.

公开(公告)号：US20210143160A1

公开(公告)日：2021-05-13

申请号：US16942456

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJOON RYU ,  YOUNGHWAN SON ,  SEOGOO KANG ,  JESUK MOON ,  JUNGHOON JUN ,  KOHJI KANAMORI ,  JEEHOON HAN

IPC: H01L27/1157 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor device includes; gate layers stacked on a substrate, a channel layer extending through the gate layers, a string select gate layer disposed on the channel layer and a string select channel layer extending through the string select gate layer to contact the channel layer. The string select channel layer includes a first portion below the string select gate layer including a first protruding region, a second portion extending through the string select gate layer, and a third portion above the string select gate layer including a second protruding region.

公开(公告)号：US20230262984A1

公开(公告)日：2023-08-17

申请号：US18138189

申请日：2023-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJOON RYU ,  KWANYONG KIM ,  SEOGOO KANG ,  SUNIL SHIM ,  WONSEOK CHO ,  JEEHON HAN

IPC: H10B43/35 ,  H01L23/522 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40

CPC classification number: H10B43/35 ,  H01L23/5226 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40

Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.

公开(公告)号：US20220246624A1

公开(公告)日：2022-08-04

申请号：US17659990

申请日：2022-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KOHJI KANAMORI ,  SEOGOO KANG ,  JONGSEON AHN ,  JEEHOON HAN

IPC: H01L27/1157 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11565 ,  H01L27/11573 ,  H01L29/49 ,  H01L21/28 ,  H01L27/11519 ,  H01L27/11582

Abstract: A three-dimensional memory device is provided. The three-dimensional memory device may include a substrate, a cell stack, a string selection line gate electrode, a lower vertical channel structure, an upper vertical channel structure, and a bit line. The string selection line gate electrode may include a lower string selection line gate electrode and an upper string selection line gate electrode formed on an upper surface of the lower string selection line gate electrode. The lower string selection line gate electrode may include N-doped poly-crystalline silicon. The upper string selection line gate electrode may include silicide.