公开(公告)号：US20220226868A1

公开(公告)日：2022-07-21

申请号：US17502463

申请日：2021-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Seok ROH ,  Suji GIM ,  Heesub KIM ,  Hee Ock PARK ,  Jongyong BAE ,  Sung Chul YOON ,  Sunsoo LEE ,  Dong Keun JEON ,  Jinkyoung JOO

IPC: B08B9/08 ,  B08B3/02 ,  B08B5/02

Abstract: A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.

公开(公告)号：US20240321989A1

公开(公告)日：2024-09-26

申请号：US18397561

申请日：2023-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gunho JO ,  Heesub KIM ,  Seunghyun LIM ,  Bomi KIM ,  Eunho CHO

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device includes a substrate, an active pattern including a lower pattern extending in a first direction and a plurality of sheet patterns above an upper surface of the lower pattern and spaced apart from the lower pattern in a second direction substantially perpendicular to the first direction, a gate structure on the lower pattern and including a gate electrode and a gate insulating film, the gate electrode and the gate insulating film at least partially surrounding the plurality of sheet patterns, a first gate capping pattern on the gate structure and above the plurality of sheet patterns in the second direction, a gate spacer extending along a side wall of the gate structure, and a second gate capping pattern extending along an upper surface of the gate structure and an upper surface of the first gate capping pattern.

公开(公告)号：US20240194536A1

公开(公告)日：2024-06-13

申请号：US18215459

申请日：2023-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heesub KIM ,  GUNHO JO ,  BOMI KIM ,  Eunho CHO

IPC: H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/823481 ,  H01L27/088

Abstract: A method for manufacturing a semiconductor device includes: forming a semiconductor structure and a dummy structure on a substrate; forming a first insulating layer between the semiconductor structure and the dummy structure; forming a first space by removing the dummy structure; forming an isolation pattern in the first space; forming a main gate sacrificial pattern crossing the first direction to overlap the semiconductor structure; forming second spaces by removing portions of the semiconductor structure at both sides of the main gate sacrificial pattern, and forming source/drain patterns in the second spaces; forming a second insulating layer on the source/drain patterns; forming a third space by removing the main gate sacrificial pattern, and forming a gate electrode in the third space; and forming fourth spaces by removing the second insulating layer, and forming, in the fourth spaces, contact structures connected to the source/drain patterns and disposed on both sides of the isolation pattern.

公开(公告)号：US20240181380A1

公开(公告)日：2024-06-06

申请号：US18442528

申请日：2024-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Seok ROH ,  Suji GIM ,  Heesub KIM ,  Hee Ock PARK ,  Jongyong BAE ,  Sung Chul YOON ,  Sunsoo LEE ,  Dong Keun JEON ,  Jinkyoung JOO

IPC: B01D47/06 ,  B08B9/08 ,  H01J37/32

CPC classification number: B01D47/06 ,  H01J37/32844 ,  B08B9/0813

Abstract: A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.