公开(公告)号：US20230197806A1

公开(公告)日：2023-06-22

申请号：US18113116

申请日：2023-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namgyu CHO ,  Minwoo SONG ,  Ohseong KWON ,  Wandon KIM ,  Hyeokjun SON ,  Jinkyu JANG

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L29/775 ,  H01L29/66

CPC classification number: H01L29/41791 ,  H01L29/7855 ,  H01L29/4236 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/0673 ,  H01L29/78696 ,  H01L29/775 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7854 ,  H01L29/66439 ,  H01L29/4966

Abstract: A semiconductor device includes: an active fin disposed on a substrate; a gate structure overlapping the active fin; source/drain regions disposed on both sides of the gate structure and on the active fin; and contact structures respectively connected to the source/drain regions, wherein the gate structure includes: a pair of gate spacers spaced apart from each other to provide a trench; a first gate electrode disposed in the trench and extending along an upper surface and a lateral surface of the active fin; a second gate electrode disposed on the first gate electrode in the trench, wherein the first gate electrode is not disposed between the second gate electrode and the pair of gate spacers; and a gate insulating film disposed between the pair of gate spacers and interposed between the first gate electrode and the active fin.