公开(公告)号：US20160233083A1

公开(公告)日：2016-08-11

申请号：US15016309

申请日：2016-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su-min KIM ,  Hyun-woo KIM ,  Hyo-jin YUN ,  Kyoung-seon KIM ,  Hai-sub NA ,  Su-min PARK ,  So-ra HAN

IPC: H01L21/027

CPC classification number: H01L21/0276 ,  G03F7/091 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/28273 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract translation: 一种制造半导体器件的方法，包括在衬底上形成蚀刻靶膜; 在蚀刻靶膜上形成抗反射膜; 在抗反射膜上形成光致抗蚀剂膜; 曝光光刻胶膜; 对抗反射膜和光致抗蚀剂膜进行热处理，以在防反射膜和光致抗蚀剂膜之间形成共价键; 并显影光致抗蚀剂膜。