公开(公告)号：US20140115424A1

公开(公告)日：2014-04-24

申请号：US14052834

申请日：2013-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Seuk YOO ,  Jun-Jin KONG ,  Chang-Kyu SEOL ,  Hong-Rak SON ,  Young-Geon YOO

IPC: G06F12/00 ,  G06F11/10 ,  G06F12/02

CPC classification number: G06F12/00 ,  G06F11/10 ,  G06F11/1048 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3427 ,  G11C16/3454 ,  G11C29/00 ,  G11C2211/5648

Abstract: Provided is a method of operating a memory system. The method includes programming first bit data into multiple memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating multiple third bit data by performing a first process on the second bit data; and selecting third bit data of the calculated multiple third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the multiple third bit data, respectively. The selected third bit data is programmed into the memory cells.

Abstract translation: 提供了一种操作存储器系统的方法。 该方法包括将第一位数据编程到多个存储器单元中; 识别处于第一状态并且具有等于或大于来自由第一位数据编程的存储器单元的第一电压的阈值电压的目标存储器单元; 接收要编程到存储器单元中的第二位数据; 通过对所述第二位数据执行第一处理来计算多个第三位数据; 以及当所述存储器单元分别被所述多个第三位数据中的每一个编程时，选择将所述最大数目的目标存储单元从所述第一状态改变到第二状态的所计算的多个第三位数据的第三位数据。 所选择的第三位数据被编程到存储器单元中。