公开(公告)号：US11776858B2

公开(公告)日：2023-10-03

申请号：US16798575

申请日：2020-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsung Lee ,  Suhong Kim ,  Youngwon Shin ,  Hyungchul Cho ,  Jaehyoung Lee ,  Hyunjae Jung

IPC: H01L21/66 ,  H01L21/67 ,  H01J37/305 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L22/20 ,  H01J37/3053 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67253

Abstract: A method of manufacturing a semiconductor device includes preparing etched mapping data by measuring an etching amount of a wafer subjected to an etching process, determining an error region in which the etching amount of the wafer is outside of a reference value, based on the etched mapping data, compensating distribution of an electrical field applied to the wafer, and compensating exhaust distribution of a process gas, changed by the compensating distribution of an electrical field.

公开(公告)号：US11488804B2

公开(公告)日：2022-11-01

申请号：US16665120

申请日：2019-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngwon Shin ,  Heechul Lee ,  Joonsung Lee ,  Hyunjae Jung ,  Hyungchul Cho

IPC: H01J37/32 ,  H01L21/3213

Abstract: A shower head assembly for a plasma processing apparatus in which a substrate is accommodatable on a substrate stage within a chamber, a plasma processing apparatus, and a plasma processing method, the shower head assembly including a shower plate including a plurality of injection holes through which a gas is sprayable out toward the substrate; and a compensation plate on a lower surface of the shower plate and facing the substrate, the compensation plate including a first compensating portion having first gas passages of a first length and a second compensating portion having second gas passages of a second length that is greater than the first length, wherein the first gas passage and the second gas passage are respectively in fluid communication with the injection holes.