公开(公告)号：US10304539B2

公开(公告)日：2019-05-28

申请号：US15259743

申请日：2016-09-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Intae Hwang ,  Junseok Park

IPC: G11C11/22 ,  G11C16/10 ,  G11C11/56 ,  G06F3/06 ,  G11C16/32 ,  G11C16/04

Abstract: An operation method of a nonvolatile memory system includes receiving a write command from an external device, determining continuity of the write command based on an idle time, and performing a write operation of the write command in one of a fast mode and a normal mode based on the determination result.

公开(公告)号：US10535406B2

公开(公告)日：2020-01-14

申请号：US15615043

申请日：2017-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intae Hwang ,  Jinwan Jun

IPC: G11C29/00 ,  G11C16/10 ,  G06F11/07 ,  G11C29/52

Abstract: A copy-back method of a storage device includes reading a memory data from a source area of the storage device. A number of error bits of the memory data is determined. An inspection read operation is performed if the number of error bits exceeds a reference value. The memory data is written to a destination area of the storage device if the number of error bits does not exceed the reference value.

公开(公告)号：US20180061494A1

公开(公告)日：2018-03-01

申请号：US15615043

申请日：2017-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intae Hwang ,  Jinwan Jun

IPC: G11C16/10 ,  G06F11/07

Abstract: A copy-back method of a storage device includes reading a memory data from a source area of the storage device. A number of error bits of the memory data is determined. An inspection read operation is performed if the number of error bits exceeds a reference value. The memory data is written to a destination area of the storage device if the number of error bits does not exceed the reference value.