公开(公告)号：US20250089297A1

公开(公告)日：2025-03-13

申请号：US18621413

申请日：2024-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEEWOONG KIM ,  SUNGMOON LEE ,  YUNSUK NAM ,  KEUN HWI CHO

IPC: H01L29/417 ,  H01L21/285 ,  H01L23/528 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device according to embodiment includes: a base insulation layer having a first surface and a second surface facing each other with a thickness therebetween; a channel layer on the first surface of the base insulation layer; a first source/drain pattern and a second source/drain pattern on the first surface of the base insulation layer and arranged in a first direction with the channel layer therebetween; a gate structure, that extends in a second direction crossing the first direction on the first surface of the base insulation layer, and surrounds the channel layer; a first silicide layer on a side wall of a recess pattern that penetrates the first source/drain pattern in a third direction that is perpendicular to the first direction and the second direction; and an interlayer insulation layer that is disposed in the recess pattern.