公开(公告)号：US20170199456A1

公开(公告)日：2017-07-13

申请号：US15293756

申请日：2016-10-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JIN PARK ,  HYUN WOO KIM ,  JIN KYU HAN

IPC分类号： G03F7/039 ,  H01L21/3065 ,  H01L21/308 ,  G03F7/004 ,  G03F7/32 ,  G03F7/16 ,  G03F7/40 ,  H01L21/027 ,  G03F7/20

CPC分类号： G03F7/0397 ,  G03F7/0048 ,  G03F7/039 ,  G03F7/162 ,  G03F7/20 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081

摘要： Provided are a photoresist composition and a method of manufacturing a semiconductor device using the same. The method of manufacturing a semiconductor device comprises forming a mask layer and a photoresist layer on a substrate, forming a photoresist pattern by patterning the photoresist layer, forming a mask pattern by patterning the mask layer through the photoresist pattern and forming a pattern by etching the substrate using the mask pattern, wherein the formation of the photoresist layer comprises forming the photoresist layer, using a photoresist composition comprising a polymer which includes a protecting group that causes decarboxylation by radical.