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    STORAGE DEVICES AND METHODS OF OPERATING STORAGE DEVICES
    4.
    发明申请
    STORAGE DEVICES AND METHODS OF OPERATING STORAGE DEVICES 审中-公开
    存储设备和操作存储设备的方法

    公开(公告)号：US20160247577A1

    公开(公告)日：2016-08-25

    申请号：US15143971

    申请日：2016-05-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JU SEOK LEE

    IPC: G11C16/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

    CPC classification number: G11C16/34 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C16/3445 ,  G11C16/349

    Abstract: A method of operating a storage device may include receiving a read command and a read address, performing a read operation on selected memory cells corresponding to a selected string selection line and a selected word line based on the read address and performing a reliability verification read on unselected memory cells. Data read by the read operation may be output to an external device, and data read by the reliability verification read may be not output to the external device.

    Abstract translation: 操作存储设备的方法可以包括接收读取命令和读取地址，基于所读取的地址对所选择的字符串选择行和所选择的字线对应于所选择的存储器单元执行读取操作并执行读取可靠性验证 未选择的存储单元 通过读取操作读取的数据可以被输出到外部设备，并且可靠性验证读取的数据可能不被输出到外部设备。

    NON-VOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION
    5.
    发明申请
    NON-VOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION 审中-公开
    非易失性存储器件及其相关操作方法

    公开(公告)号：US20150155048A1

    公开(公告)日：2015-06-04

    申请号：US14617976

    申请日：2015-02-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JAEYONG JEONG ,  JU SEOK LEE

    IPC: G11C16/26 ,  G11C16/24

    CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/24 ,  G11C16/3454

    Abstract: A nonvolatile memory device comprises a cell array connected to a plurality of bit lines in an all bit line structure, a page buffer circuit connected to the plurality of bit lines, and control logic configured to control the page buffer circuit. The control logic controls the page buffer circuit to sense memory cells corresponding to both even-numbered and odd-numbered columns of a selected page in a first read mode and to sense memory cells corresponding to one of the even-numbered and odd-numbered columns of the selected page in a second read mode. A sensing operation is performed at least twice in the first read mode and once in the second read mode.

    Abstract translation: 非易失性存储器件包括连接到全位线结构中的多个位线的单元阵列，连接到多个位线的寻址缓冲器电路以及被配置为控制页缓冲器电路的控制逻辑。 控制逻辑控制页面缓冲电路以在第一读取模式中感测与选定页面的偶数和偶数列对应的存储器单元，并且读取对应于偶数和奇数列之一的存储器单元 的第二读取模式。 在第一读取模式下执行感测操作至少两次，并且在第二读取模式中执行一次感测操作。

    METHOD OF READING MEMORY CELLS WITH DIFFERENT THRESHOLD VOLTAGES WITHOUT VARIATION OF WORD LINE VOLTAGE AND NONVOLATILE MEMORY DEVICE USING THE SAME
    6.
    发明申请
    METHOD OF READING MEMORY CELLS WITH DIFFERENT THRESHOLD VOLTAGES WITHOUT VARIATION OF WORD LINE VOLTAGE AND NONVOLATILE MEMORY DEVICE USING THE SAME 审中-公开
    使用不同变化的线路电压和非易失性存储器件读取具有不同阈值电压的存储器电池的方法

    公开(公告)号：US20140334233A1

    公开(公告)日：2014-11-13

    申请号：US14340773

    申请日：2014-07-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： SANG-HYUN JOO ,  KIWHAN SONG ,  JU SEOK LEE ,  KIHWAN CHOI

    IPC: G11C16/26

    CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C2211/563

    Abstract: A soft-decision read method of a nonvolatile memory device includes receiving a soft-decision read command, applying a read voltage to a selected word line, pre-charging bit lines respectively connected to selected memory cells of the selected word line, continuously sensing states of the selected memory cells. The pre-charged voltages of the bit lines and the read voltage supplied to the selected word line are not varied during the sensing states of the selected memory cells.

    Abstract translation: 非易失性存储器件的软判决读取方法包括：接收软判决读命令，将读电压施加到所选择的字线，对分别连接到所选字线的选定存储单元的位线进行预充电，连续检测状态 的所选存储单元。 提供给所选字线的位线的预充电电压和读取电压在所选存储单元的感测状态期间不改变。

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