公开(公告)号：US20230378068A1

公开(公告)日：2023-11-23

申请号：US18098986

申请日：2023-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHOO SHIN ,  SANGHYUN LEE ,  KOUNGMIN RYU ,  JONGMIN BAEK ,  KYUNGYUB JEON ,  KYU-HEE HAN

IPC: H01L23/532 ,  H01L27/092 ,  H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L23/522

CPC classification number: H01L23/5329 ,  H01L27/092 ,  H01L29/41725 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L23/5226

Abstract: A semiconductor device may include PMOSFET and NMOSFET regions spaced apart from each other on a substrate, first and second active patterns provided on the PMOSFET and NMOSFET regions, respectively, a first channel pattern on the first active pattern, a source/drain pattern electrically connected to the first channel pattern, an active contact electrically connected to the source/drain pattern, the active contact including a first conductive pattern and a first barrier pattern enclosing a portion of a side surface and a bottom surface of the first conductive pattern, a gate electrode extending in a direction crossing the first channel pattern, a gate contact electrically connected to the gate electrode, an air gap provided on the first barrier pattern and between the gate contact and the first conductive pattern, and a lower via provided on the active contact. The lower via may be adjacent to the air gap.

公开(公告)号：US20220384340A1

公开(公告)日：2022-12-01

申请号：US17530206

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGHOO SHIN ,  JONGMIN BAEK ,  SANGHOON AHN ,  WOOJIN LEE ,  JUNHYUK LIM

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor integrated circuit device includes a substrate; a transistor on the substrate; an interlayer insulating film on the transistor; an insulating liner on the interlayer insulating film; a first insulating film on the insulating liner; and a first wiring layer on the interlayer insulating film and surrounded by the insulating liner. A height of a top surface of the first insulating film in a vertical direction from a main surface of the interlayer insulating film is different than a height of a top surface of the first wiring layer in the vertical direction. A step exists between the top surfaces of the first wiring layer and the first insulating film. A height of the first insulating film is greater than a height of the first wiring layer. A width of the first wiring layer gradually narrows as the first wiring layer extends upwards along the vertical direction.