公开(公告)号：US20230170028A1

公开(公告)日：2023-06-01

申请号：US17814270

申请日：2022-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Ik Park ,  Jae Hun Lee ,  Chang Min Jeon ,  Yong Kyu Lee

IPC: G11C16/26 ,  G11C16/10 ,  G11C16/14 ,  H01L27/11526 ,  H01L27/11573

CPC classification number: G11C16/26 ,  G11C16/10 ,  G11C16/14 ,  H01L27/11526 ,  H01L27/11573

Abstract: A non-volatile memory device includes a memory cell which stores one of first data and second data, and includes a first sub-memory cell connected to a first word line and a first bit line, and a second sub-memory cell connected to a second word line and a second bit line, a source line shared by the first sub-memory cell and the second sub-memory cell, and a sense amplifier connected to the first bit line and the second bit line which reads data stored in the memory cell. The sense amplifier receives a first current from the first bit line, receives a second current from the second bit line, and reads data stored in the memory cell by comparing magnitudes of the first current and the second current. The first sub-memory cell is programmed, and the second sub-memory cell is erased, in response to the memory cell storing the first data.