公开(公告)号：US20250056838A1

公开(公告)日：2025-02-13

申请号：US18584688

申请日：2024-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seo Woo Nam ,  Heon Jong Shin ,  Jae Ran Jang

IPC: H01L29/417 ,  H01L23/522 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device comprises a back insulating pattern comprising a first region, and a second region and extending in a first direction, a plurality of sheet patterns disposed on the back insulating pattern, and extending in the first direction, a first source/drain pattern disposed on the first region of the back insulating pattern, and connected to the plurality of sheet patterns, a second source/drain pattern disposed on the second region of the back insulating pattern, and connected to the plurality of sheet patterns, a gate electrode extending in a second direction crossing the first direction, and surrounding the plurality of sheet patterns, a first back source/drain contact that extends into the first region of the back insulating pattern, and connected to the first source/drain pattern and a second back source/drain contact that extends into the second region of the back insulating pattern, and connected to the second source/drain pattern.

公开(公告)号：US20230207654A1

公开(公告)日：2023-06-29

申请号：US18054890

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DOO HYUN LEE ,  Heon Jong Shin ,  Hyun Ho Park ,  Seon-Bae Kim ,  Jin Young Park ,  Jae Ran Jang

IPC: H01L29/45 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L21/285 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/45 ,  H01L21/28518 ,  H01L29/161 ,  H01L29/401 ,  H01L29/0673 ,  H01L29/775 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66742

Abstract: A semiconductor device includes an active pattern that extends in a first direction; a plurality of gate structures that are spaced apart in the first direction, and include a gate electrode that extends in a second direction; a source/drain recess between adjacent gate structures; a source/drain pattern in the source/drain recess; a source/drain contact connected to the source/drain pattern and that includes a lower part on the source/drain pattern and an upper par; and a contact silicide film disposed along the lower part of the source/drain contact and between the source/drain contact and the source/drain region. The source/drain pattern includes a semiconductor liner film that extends along the source/drain recess and includes silicon germanium, a semiconductor filling film on the semiconductor liner film and that includes silicon germanium, and a semiconductor insertion film that extends along side walls of the lower part of the source/drain contact and includes silicon germanium.