公开(公告)号：US09385134B2

公开(公告)日：2016-07-05

申请号：US14340710

申请日：2014-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Ho Min ,  Ki-Jeong Kim ,  Kyoung-Sub Shin ,  Dong-Hyun Kim

IPC: H01L23/52 ,  H01L23/48 ,  H01L27/115 ,  H01L27/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L27/32

CPC classification number: H01L27/11517 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L27/0203 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/3276

Abstract: In a semiconductor device, parallel first and second conductive lines having a unit width extend from a memory cell region into a connection region. A trim region in the connection region includes pads respectively connected to the first and second conductive lines but are separated by a width much greater than the unit width.

Abstract translation: 在半导体器件中，具有单位宽度的并行的第一和第二导线从存储单元区域延伸到连接区域。 连接区域中的修剪区域包括分别连接到第一和第二导电线但是被分开的宽度远大于单位宽度的焊盘。

公开(公告)号：US09865540B2

公开(公告)日：2018-01-09

申请号：US15207610

申请日：2016-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuk Kim ,  Jae-Ho Min ,  Jong-Kyoung Park ,  Seung-Pil Chung

IPC: H01L29/792 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/11575 ,  H01L27/1157

CPC classification number: H01L23/5283 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/5226 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

Abstract: A vertical memory device includes a plurality of gate lines, at least one etch-stop layer, channels, and contacts. The gate lines are stacked and spaced apart from each other along a first direction with respect to a surface of substrate. Each of the gate lines includes step portion protruding in a second direction. The at least one etch-stop layer covers the step portion of at least one of the gate lines and includes conductive material. The channels extend through the gate lines in the first direction. The contacts extend through the at least one etch-stop layer and are on the step portions of the gate lines.