公开(公告)号：US20240047319A1

公开(公告)日：2024-02-08

申请号：US18125348

申请日：2023-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongho PARK ,  Gyuho Kang ,  Sung Keun Park ,  Seong-Hoon Bae ,  Jaemok Jung ,  Ju-ll Choi

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L23/49811 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L25/105 ,  H01L21/4853 ,  H01L21/563 ,  H01L25/50 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/48227 ,  H01L24/48

Abstract: A semiconductor package includes a first substrate, a semiconductor chip on the first substrate, a second substrate spaced apart from the first substrate, a wire spaced apart from a lateral surface of the semiconductor chip and connecting the first substrate to the second substrate, a mold structure on a top surface of the semiconductor chip, the lateral surface of the semiconductor chip, and a lateral surface of the wire, and an under-fill pattern on the lateral surface of the wire and is between the wire and the mold structure.

公开(公告)号：US10985091B2

公开(公告)日：2021-04-20

申请号：US16691910

申请日：2019-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daeyeun Choi ,  Jaemok Jung ,  Eunjin Kim ,  Chilwoo Kwon

IPC: H01L23/495 ,  H01L23/28 ,  H01L23/522

Abstract: This invention provides a semiconductor package, the semiconductor package includes: a semiconductor chip having a connection pad; an encapsulant covering at least a portion of the semiconductor chip; and a connection structure disposed on the semiconductor chip and the encapsulant. The connection structure comprises a first insulation layer, a first redistribution layer disposed on the first insulation layer, and a second insulation layer disposed on the first insulation layer and covering the first redistribution layer. The first redistribution layer has one or more openings. The openings have a shape having a plurality of protrusions, respectively, and B/A is 1.5 or less, where A refers to a thickness of the first redistribution layer, and B refers to a thickness of a region of the second insulation layer covering the first redistribution layer.