公开(公告)号：US20190301016A1

公开(公告)日：2019-10-03

申请号：US16207967

申请日：2018-12-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SHIN-JAE KANG ,  Dong-Hoon HAN ,  Do-Hyung KIM ,  Kyung-Wook PARK ,  Kevin BAE ,  Sun-Soo LEE ,  In-Jae LEE ,  Jeon-II LEE ,  Chae-Mook LIM

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768

Abstract: In a layer deposition method, a substrate is loaded into a process chamber. A gas filling tank is charged with a gas to a predetermined charge pressure. The pressure of the gas is elevated to a pressure greater than the predetermined charge pressure. The gas is introduced into the process chamber.

公开(公告)号：US20150061136A1

公开(公告)日：2015-03-05

申请号：US14267008

申请日：2014-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-seok YOO ,  Young-seok KIM ,  Han-jin LIM ,  Jeon-II LEE

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5225 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76879 ,  H01L21/76892 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. In order to improve reliability by solving a problem of conductivity that may occur when an air spacer structure that may reduce a capacitor coupling phenomenon between a plurality of conductive lines is formed, there are provided a semiconductor device including: a substrate having an active region; a contact plug connected to the active region; a landing pad spacer formed to contact a top surface of the contact plug; a contact conductive layer formed to contact the top surface of the contact plug and formed in a space defined by the landing pad spacer; a metal silicide layer formed on the contact conductive layer; and a landing pad connected to the contact conductive layer in a state in which the metal silicide layer is disposed between the landing pad and the contact conductive layer, and a method of manufacturing the semiconductor device.

Abstract translation: 提供半导体器件和制造半导体器件的方法。 为了通过解决当形成能够减少多个导线之间的电容耦合现象的空气间隔结构时可能发生的导电性问题，为了提高可靠性，提供了一种半导体器件，包括：具有有源区的基板; 连接到活动区域的接触插塞; 形成为接触所述接触插塞的顶表面的着陆垫间隔件; 接触导电层，其形成为接触所述接触插塞的顶表面并形成在由所述着陆垫间隔件限定的空间中; 形成在所述接触导电层上的金属硅化物层; 以及在金属硅化物层设置在着陆焊盘和接触导电层之间的状态下连接到接触导电层的着陆焊盘以及制造半导体器件的方法。