公开(公告)号：US20210313839A1

公开(公告)日：2021-10-07

申请号：US17352684

申请日：2021-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-hyuk KIM ,  Seok-hyun KIM ,  Young-seok KIM

IPC: H02J50/12 ,  H02J50/80 ,  H02J7/00 ,  H04B5/00 ,  G06F1/3234 ,  G06F1/26

Abstract: A wireless communication device includes a battery, a power management integrated circuit (PMIC), a near field communication (NFC) integrated circuit connected to the battery and to the PMIC, and an internal device connected to the NFC integrated circuit and configured to support an NFC operation, wherein the NFC integrated circuit includes a power supply path control circuit configured to cut off a first power supply path from the PMIC to the internal device when the NFC integrated circuit is in an on-state or an operating state and to form a second power supply path from the battery to the internal device to supply power to the internal device based on existence or non-existence of a first supply voltage provided from the PMIC.

公开(公告)号：US20150061136A1

公开(公告)日：2015-03-05

申请号：US14267008

申请日：2014-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-seok YOO ,  Young-seok KIM ,  Han-jin LIM ,  Jeon-II LEE

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5225 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76879 ,  H01L21/76892 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. In order to improve reliability by solving a problem of conductivity that may occur when an air spacer structure that may reduce a capacitor coupling phenomenon between a plurality of conductive lines is formed, there are provided a semiconductor device including: a substrate having an active region; a contact plug connected to the active region; a landing pad spacer formed to contact a top surface of the contact plug; a contact conductive layer formed to contact the top surface of the contact plug and formed in a space defined by the landing pad spacer; a metal silicide layer formed on the contact conductive layer; and a landing pad connected to the contact conductive layer in a state in which the metal silicide layer is disposed between the landing pad and the contact conductive layer, and a method of manufacturing the semiconductor device.

Abstract translation: 提供半导体器件和制造半导体器件的方法。 为了通过解决当形成能够减少多个导线之间的电容耦合现象的空气间隔结构时可能发生的导电性问题，为了提高可靠性，提供了一种半导体器件，包括：具有有源区的基板; 连接到活动区域的接触插塞; 形成为接触所述接触插塞的顶表面的着陆垫间隔件; 接触导电层，其形成为接触所述接触插塞的顶表面并形成在由所述着陆垫间隔件限定的空间中; 形成在所述接触导电层上的金属硅化物层; 以及在金属硅化物层设置在着陆焊盘和接触导电层之间的状态下连接到接触导电层的着陆焊盘以及制造半导体器件的方法。

公开(公告)号：US20190305599A1

公开(公告)日：2019-10-03

申请号：US16258958

申请日：2019-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-hyuk KIM ,  Seok-hyun KIM ,  Young-seok KIM

IPC: H02J50/12 ,  H02J50/80 ,  H02J7/00 ,  H04B5/00

Abstract: A wireless communication device includes a battery, a power management integrated circuit (PMIC), a near field communication (NFC) integrated circuit connected to the battery and to the PMIC, and an internal device connected to the NFC integrated circuit and configured to support an NFC operation, wherein the NFC integrated circuit includes a power supply path control circuit configured to cut off a first power supply path from the PMIC to the internal device when the NFC integrated circuit is in an on-state or an operating state and to form a second power supply path from the battery to the internal device to supply power to the internal device based on existence or non-existence of a first supply voltage provided from the PMIC.