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公开(公告)号：US20240203701A1
公开(公告)日：2024-06-20
申请号：US18523234
申请日：2023-11-29
发明人： Soonku Kwon , Sunggil Kang , Chanyeong Jeong , Jeongmin Bang , Yeongkwang Lee , Ilgon Choi
IPC分类号： H01J37/32
CPC分类号： H01J37/32522 , H01J37/32422 , H01J2237/002
摘要： A substrate processing apparatus includes a chamber including a first space and a second space, a substrate support in the first space and configured to support a substrate, a plasma source configured to generate plasma in the second space, an ion blocker between the second space and the first space, the ion blocker including through-holes configured to pass therethrough radicals of the plasma from the second space to the first space and provide the radicals to the substrate, and a temperature controller including a plurality of heaters connected to the ion blocker, one or more chillers, and a controller configured to control output of the plurality of heaters and output of the one or more chillers, where the ion blocker includes a plurality of regions, each of the plurality of regions including a heating line, one or more boundary regions.
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公开(公告)号：US10998185B2
公开(公告)日：2021-05-04
申请号：US16294453
申请日：2019-03-06
发明人： Beomjin Yoo , Minhyoung Kim , Wonhyuk Jang , Hoseop Choi , Jeongmin Bang , KyuHee Han
IPC分类号： H01L21/02 , H01L21/67 , H01L21/268
摘要： Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.
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