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1.发明授权公开(公告)号：US10522332B2
公开(公告)日：2019-12-31
申请号：US16421433
申请日：2019-05-23
发明人： Yeongkwang Lee , Sunggil Kang , Sang Ki Nam , Kwangyoub Heo , Kyuhee Han
IPC分类号： H01J37/317 , H01J37/32 , H01L21/683
摘要： A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.
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2.发明授权公开(公告)号：US10347468B2
公开(公告)日：2019-07-09
申请号：US15870800
申请日：2018-01-12
发明人： Yeongkwang Lee , Sunggil Kang , Sang Ki Nam , Kwangyoub Heo , Kyuhee Han
IPC分类号： H01J37/32 , H01L21/683
摘要： A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.
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公开(公告)号：US20240203701A1
公开(公告)日：2024-06-20
申请号：US18523234
申请日：2023-11-29
发明人： Soonku Kwon , Sunggil Kang , Chanyeong Jeong , Jeongmin Bang , Yeongkwang Lee , Ilgon Choi
IPC分类号： H01J37/32
CPC分类号： H01J37/32522 , H01J37/32422 , H01J2237/002
摘要： A substrate processing apparatus includes a chamber including a first space and a second space, a substrate support in the first space and configured to support a substrate, a plasma source configured to generate plasma in the second space, an ion blocker between the second space and the first space, the ion blocker including through-holes configured to pass therethrough radicals of the plasma from the second space to the first space and provide the radicals to the substrate, and a temperature controller including a plurality of heaters connected to the ion blocker, one or more chillers, and a controller configured to control output of the plurality of heaters and output of the one or more chillers, where the ion blocker includes a plurality of regions, each of the plurality of regions including a heating line, one or more boundary regions.
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公开(公告)号：US11289308B2
公开(公告)日：2022-03-29
申请号：US16860745
申请日：2020-04-28
发明人： Sangjin An , Minseop Park , Chanyeong Jeong , Sunggil Kang , Yeongkwang Lee
IPC分类号： H01J37/32 , H01L21/67 , H01L21/3065 , H01L21/683
摘要： A substrate processing apparatus includes a process chamber including a plasma generation region configured to receive at least one first process gas and have first radio-frequency (RF) power applied thereto, to generate plasma; a gas distribution region configured to supply the at least one first process gas to the plasma generation region; a gas mixing region configured to receive at least one second process gas and radicals generated in the plasma generation region to generate an etchant based on the radicals being mixed with the at least one second process gas; a pedestal on which a substrate is disposed; a processing region in which the pedestal is installed; and a shower head configured to supply the etchant from the gas mixing region to the processing region, the substrate disposed on the pedestal being processed by the etchant. The gas mixing region is separate from each of the plasma generation region and the processing region.
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公开(公告)号：US10553401B2
公开(公告)日：2020-02-04
申请号：US15453595
申请日：2017-03-08
发明人： Yeongkwang Lee , Yongkyun Park , Dongsoo Lee , Sangheon Lee
IPC分类号： H01J37/32
摘要： Embodiments of the inventive concepts provide an antenna, a microwave plasma source including the antenna, a plasma processing apparatus including the antenna, and a method of manufacturing method of a semiconductor device. The antenna includes a lower ring having a plurality of output slits, and an upper ring disposed on the lower ring. The upper ring has an input slit transmitting microwave power from an outside of the upper ring onto the lower ring. The upper ring is configured to rotate with respect to the lower ring.
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