公开(公告)号：US20240203701A1

公开(公告)日：2024-06-20

申请号：US18523234

申请日：2023-11-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Soonku Kwon ,  Sunggil Kang ,  Chanyeong Jeong ,  Jeongmin Bang ,  Yeongkwang Lee ,  Ilgon Choi

IPC分类号： H01J37/32

CPC分类号： H01J37/32522 ,  H01J37/32422 ,  H01J2237/002

摘要： A substrate processing apparatus includes a chamber including a first space and a second space, a substrate support in the first space and configured to support a substrate, a plasma source configured to generate plasma in the second space, an ion blocker between the second space and the first space, the ion blocker including through-holes configured to pass therethrough radicals of the plasma from the second space to the first space and provide the radicals to the substrate, and a temperature controller including a plurality of heaters connected to the ion blocker, one or more chillers, and a controller configured to control output of the plurality of heaters and output of the one or more chillers, where the ion blocker includes a plurality of regions, each of the plurality of regions including a heating line, one or more boundary regions.

公开(公告)号：US11289308B2

公开(公告)日：2022-03-29

申请号：US16860745

申请日：2020-04-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sangjin An ,  Minseop Park ,  Chanyeong Jeong ,  Sunggil Kang ,  Yeongkwang Lee

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/683

摘要： A substrate processing apparatus includes a process chamber including a plasma generation region configured to receive at least one first process gas and have first radio-frequency (RF) power applied thereto, to generate plasma; a gas distribution region configured to supply the at least one first process gas to the plasma generation region; a gas mixing region configured to receive at least one second process gas and radicals generated in the plasma generation region to generate an etchant based on the radicals being mixed with the at least one second process gas; a pedestal on which a substrate is disposed; a processing region in which the pedestal is installed; and a shower head configured to supply the etchant from the gas mixing region to the processing region, the substrate disposed on the pedestal being processed by the etchant. The gas mixing region is separate from each of the plasma generation region and the processing region.

公开(公告)号：US20240282586A1

公开(公告)日：2024-08-22

申请号：US18640481

申请日：2024-04-19

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Chanyeong Jeong ,  Hoseop Choi ,  Sunggil Kang ,  Dongkyu Shin ,  Sangjin An

IPC分类号： H01L21/324 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01L21/324 ,  H01J37/321 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32724 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109

摘要： A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.

公开(公告)号：US11990348B2

公开(公告)日：2024-05-21

申请号：US17184279

申请日：2021-02-24

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Chanyeong Jeong ,  Hoseop Choi ,  Sunggil Kang ,  Dongkyu Shin ,  Sangjin An

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/324 ,  H01L21/67

CPC分类号： H01L21/324 ,  H01J37/321 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32724 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109

摘要： A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.