公开(公告)号：US20170256609A1

公开(公告)日：2017-09-07

申请号：US15296077

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Seong-Je KIM ,  Jong-Chol KIM ,  Hyun-Woo KIM

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L27/088

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/1037 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

公开(公告)号：US20210050415A1

公开(公告)日：2021-02-18

申请号：US17070221

申请日：2020-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Seong-Je KIM ,  Jong-Chol KIM ,  Hyun-Woo KIM

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/10 ,  H01L29/786 ,  H01L21/8234

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

公开(公告)号：US20190148489A1

公开(公告)日：2019-05-16

申请号：US16248983

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Seong-Je KIM ,  Jong-Chol KIM ,  Hyun-Woo KIM

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/775 ,  H01L29/66 ,  H01L29/423 ,  B82Y10/00

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.