公开(公告)号：US20210366910A1

公开(公告)日：2021-11-25

申请号：US17395778

申请日：2021-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Kyoung Min CHOI ,  Takeshi OKAGAKI ,  Dong Won KIM ,  Jong Chol KIM

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L29/06

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

公开(公告)号：US20170256609A1

公开(公告)日：2017-09-07

申请号：US15296077

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Seong-Je KIM ,  Jong-Chol KIM ,  Hyun-Woo KIM

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L27/088

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/1037 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

公开(公告)号：US20240128268A1

公开(公告)日：2024-04-18

申请号：US18535274

申请日：2023-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Kyoung Min CHOI ,  Takeshi OKAGAKI ,  Dong Won KIM ,  Jong Chol KIM

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L27/0928 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/7831 ,  H01L29/7854 ,  H01L29/78696

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

公开(公告)号：US20210050415A1

公开(公告)日：2021-02-18

申请号：US17070221

申请日：2020-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Seong-Je KIM ,  Jong-Chol KIM ,  Hyun-Woo KIM

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/10 ,  H01L29/786 ,  H01L21/8234

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

公开(公告)号：US20200066725A1

公开(公告)日：2020-02-27

申请号：US16358989

申请日：2019-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Kyoung Min CHOI ,  Takeshi OKAGAKI ,  Dong Won KIM ,  Jong Chol KIM

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

公开(公告)号：US20190148489A1

公开(公告)日：2019-05-16

申请号：US16248983

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Seong-Je KIM ,  Jong-Chol KIM ,  Hyun-Woo KIM

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/775 ,  H01L29/66 ,  H01L29/423 ,  B82Y10/00

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.