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公开(公告)号:US20190206873A1
公开(公告)日:2019-07-04
申请号:US16171517
申请日:2018-10-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jin-A KIM , Yong-Kwan KIM , Se-Keun PARK , Jung-Woo SONG , Joo-Young LEE
IPC: H01L27/108 , H01L21/768
CPC classification number: H01L27/10885 , H01L21/7682 , H01L27/10814 , H01L27/10823 , H01L27/10855
Abstract: A semiconductor device includes a bit line structure on a substrate, a spacer structure including a first spacer directly contacting a sidewall of the bit line structure, a second spacer directly contacting a portion of an outer sidewall of the first spacer, the second spacer including air, and a third spacer directly contacting an upper portion of the first spacer and covering an outer sidewall and an upper surface of the second spacer, and a contact plug structure extending in a vertical direction substantially perpendicular to an upper surface of the substrate and directly contacting an outer sidewall of the third spacer at least at a height between respective heights of a bottom and a top surface of the second spacer.
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公开(公告)号:US20230255499A1
公开(公告)日:2023-08-17
申请号:US17953050
申请日:2022-09-26
Inventor: So Young LEE , Joo-Young LEE , Dahee JUNG , Bok Soon KWON , Sang Kyu KIM , Ho Taik LEE
IPC: A61B5/0205 , A61B5/026 , A61B5/0295 , A61B5/00 , A61B5/024
CPC classification number: A61B5/02055 , A61B5/0261 , A61B5/0295 , A61B5/4866 , A61B5/7278 , A61B5/7275 , A61B5/02416 , A61B2560/0223 , A61B5/681
Abstract: An apparatus for estimating body temperature, may include: a photoplethysmogram (PPG) sensor configured to measure a PPG signal by emitting light onto an object and by detecting light scattered or reflected from the object; and a processor configured to estimate a cutaneous blood flow and an energy metabolism of the object based on the PPG signal, estimate a core body temperature of the object based on the cutaneous blood flow and the energy metabolism, and provide notification information on a risk of abnormal body temperature based on the core body temperature.
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公开(公告)号:US20190206872A1
公开(公告)日:2019-07-04
申请号:US16170665
申请日:2018-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jin-A KIM , Yong-Kwan KIM , Se-Keun PARK , Joo-Young LEE , Cha-Won KOH , Yeong-Cheol LEE
IPC: H01L27/108
CPC classification number: H01L27/10855 , H01L21/28525 , H01L21/3065 , H01L21/76879 , H01L27/10814 , H01L27/10823 , H01L27/10885 , H01L27/10888
Abstract: A semiconductor device and methods of manufacturing the same are provided. The semiconductor device includes a substrate, word lines, a doped junction, bit line structures, and buried contacts. The substrate has active regions. The word lines extend across the active regions. The doped junction has impurities and is arranged at the active regions, and includes first junctions and second junctions, each first junction arranged at a central portion of one of the active regions and each second junction arranged at an end portion of another one of the active regions, a buried semiconductor layer being included in each second junction. The bit line structures contact with a respective one of the first junctions. The buried contacts are arranged in a matrix shape, each contacting with a respective one of the second junctions and the included buried semiconductor layer and simultaneously contacting with a charge storage for storing data.
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