公开(公告)号：US20180104792A1

公开(公告)日：2018-04-19

申请号：US15602256

申请日：2017-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-ki HONG ,  Yung-jun KIM ,  Sung-oh PARK ,  Hyo-san LEE ,  Joo-han LEE ,  Kyu-min Oh ,  Sun-gyu PARK ,  Seh-kwang LEE ,  Chan-ki YANG

IPC: B24B53/017 ,  B24B37/04 ,  B24B37/005 ,  H01L21/768 ,  H01L21/321 ,  H01L21/66

CPC classification number: B24B53/017 ,  B24B37/005 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L22/12 ,  H01L22/20

Abstract: A chemical mechanical polishing (CMP) method includes preparing a polishing pad, determining a first load to be applied to a conditioning disk during conditioning of the polishing pad and a first indentation depth at which tips of the conditioning disk are inserted into the polishing pad when the first load is applied to the conditioning disk, preparing a conditioning disk, and positioning the conditioning disk on the polishing pad and conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk.