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公开(公告)号:US20240395594A1
公开(公告)日:2024-11-28
申请号:US18539834
申请日:2023-12-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hungsuk YOU , Heejung Cho , Bumsoo Song , Kyoungran Kim , Joongha Lee
IPC: H01L21/683 , H01L21/68
Abstract: An apparatus for chucking a wafer, the apparatus including a vacuum chuck arranged under the wafer with a ring frame to fix the wafer using vacuum, a plurality of clampers directly making contact with the ring frame to downwardly compress the ring frame in a vertical direction, and a plurality of alignment blocks pushing the ring frame toward a central portion of the wafer in a horizontal direction to align the wafer.
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2.
公开(公告)号:US11837573B2
公开(公告)日:2023-12-05
申请号:US17166805
申请日:2021-02-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Junhyung Kim , Joongha Lee , Sangha Park , Sunghyup Kim , Kyeongbin Lim
IPC: H01L23/00
CPC classification number: H01L24/75 , H01L2224/75252 , H01L2224/75303 , H01L2224/75502 , H01L2924/3511
Abstract: A chip bonding apparatus includes: a bonding contact configured to apply a bonding force to a semiconductor chip disposed on a substrate, the bonding contact having a first surface configured to face the semiconductor chip and a second surface opposite the first surface, the bonding contact including a protruding portion on the first surface, the protruding portion configured to contact the semiconductor chip, the bonding contact including a cavity formed in a region vertically overlapping the protruding portion, a heater disposed to be in contact with the second surface of the bonding contact to cover the cavity, and configured to heat the bonding contact, a bonding head disposed above the heater and configured to transmit the bonding force, and a partition wall structure protruding from a bottom surface of the cavity to partition an inner space of the cavity.
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3.
公开(公告)号:US20210398935A1
公开(公告)日:2021-12-23
申请号:US17166805
申请日:2021-02-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Junhyung Kim , Joongha Lee , Sangha Park , Sunghyup Kim , Kyeongbin Lim
IPC: H01L23/00
Abstract: A chip bonding apparatus includes: a bonding contact configured to apply a bonding force to a semiconductor chip disposed on a substrate, the bonding contact having a first surface configured to face the semiconductor chip and a second surface opposite the first surface, the bonding contact including a protruding portion on the first surface, the protruding portion configured to contact the semiconductor chip, the bonding contact including a cavity formed in a region vertically overlapping the protruding portion, a heater disposed to be in contact with the second surface of the bonding contact to cover the cavity, and configured to heat the bonding contact, a bonding head disposed above the heater and configured to transmit the bonding force, and a partition wall structure protruding from a bottom surface of the cavity to partition an inner space of the cavity.
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