公开(公告)号：US20180331119A1

公开(公告)日：2018-11-15

申请号：US16027667

申请日：2018-07-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jung Ho KIM ,  BiO KIM ,  Hyung Joon KIM ,  Young Seon SON ,  Su Jin SHIN ,  Jae Young AHN ,  Ju Mi YUN ,  HanMei CHOI

IPC分类号： H01L27/11582 ,  H01L29/792 ,  H01L21/28 ,  H01L27/11568 ,  H01L27/11565

CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/11568 ,  H01L29/40117 ,  H01L29/7926

摘要： A semiconductor device includes gate electrodes vertically stacked on a substrate, and channel holes passing through the gate electrodes to extend perpendicularly to the substrate and including a gate dielectric layer and a channel area. The gate dielectric layer may be formed of a plurality of layers, and at least one layer among the plurality of layers may have different thicknesses in different locations.