公开(公告)号：US20230272532A1

公开(公告)日：2023-08-31

申请号：US18005849

申请日：2020-12-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jae Hyun YANG ,  Tae Yong KIM ,  Sang Yub IE ,  Jung Geun JEE

IPC分类号： C23C16/455 ,  H01L21/67 ,  C23C16/458

CPC分类号： C23C16/45578 ,  H01L21/67098 ,  C23C16/4583 ,  C23C16/45548 ,  H01L21/0228

摘要： There is provided, a semiconductor manufacturing apparatus which reduces loss of a process gas or a precursor transferred from a nozzle to a wafer by improving the injection efficiency of the process gas or the precursor from the nozzle to the substrate. The semiconductor manufacturing apparatus includes a boat on which a substrate is loaded in a first direction, an inner tube which covers the boat, a nozzle which extends in the first direction and through which a process gas to be provided to the substrate moves, a nozzle tube which surrounds the nozzle and comprises a gas injection hole for injecting the process gas toward the substrate, and a nozzle protrusion which is connected to the gas injection hole and extends in a second direction, wherein a shortest distance from an end of the nozzle protrusion to the substrate is greater than 0 mm and less than 9 mm.

公开(公告)号：US20220028889A1

公开(公告)日：2022-01-27

申请号：US17495614

申请日：2021-10-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Eun Yeoung CHOI ,  Hyung Joon KIM ,  Su Hyeong LEE ,  Jung Geun JEE

IPC分类号： H01L27/11582 ,  H01L29/10 ,  H01L29/16 ,  H01L21/768 ,  H01L21/02 ,  H01L21/28

摘要： A vertical-type memory device includes a plurality of gate electrodes stacked on a substrate; and a vertical channel structure penetrating through the plurality of gate electrodes in a first direction, perpendicular to an upper surface of the substrate. The vertical channel structure includes a channel extending in the first direction, a first filling film that partially fills an internal space of the channel, a first liner on at least a portion of an upper surface of the first filling film and an upper internal side wall of the channel extending beyond the first filling film away from the substrate. The first liner includes n-type impurities. The vertical channel structure includes a second filling film on at least a portion of the first liner, and a pad on the second filling film and in contact with the first liner.