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    SEMICONDUCTOR MANUFACTURING APPARATUS
    1.
    发明申请
    SEMICONDUCTOR MANUFACTURING APPARATUS 有权

    公开(公告)号：US20210108313A1

    公开(公告)日：2021-04-15

    申请号：US16983142

    申请日：2020-08-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae Hyun YANG ,  Sang Yub IE ,  Tae Yong KIM ,  Phil Ouk NAM

    IPC: C23C16/455

    Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

    SEMICONDUCTOR MANUFACTURING APPARATUS AND SUBSTRATE TREATMENT METHOD USING THE SAME
    2.
    发明公开
    SEMICONDUCTOR MANUFACTURING APPARATUS AND SUBSTRATE TREATMENT METHOD USING THE SAME 审中-公开

    公开(公告)号：US20230272532A1

    公开(公告)日：2023-08-31

    申请号：US18005849

    申请日：2020-12-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae Hyun YANG ,  Tae Yong KIM ,  Sang Yub IE ,  Jung Geun JEE

    IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458

    CPC classification number: C23C16/45578 ,  H01L21/67098 ,  C23C16/4583 ,  C23C16/45548 ,  H01L21/0228

    Abstract: There is provided, a semiconductor manufacturing apparatus which reduces loss of a process gas or a precursor transferred from a nozzle to a wafer by improving the injection efficiency of the process gas or the precursor from the nozzle to the substrate. The semiconductor manufacturing apparatus includes a boat on which a substrate is loaded in a first direction, an inner tube which covers the boat, a nozzle which extends in the first direction and through which a process gas to be provided to the substrate moves, a nozzle tube which surrounds the nozzle and comprises a gas injection hole for injecting the process gas toward the substrate, and a nozzle protrusion which is connected to the gas injection hole and extends in a second direction, wherein a shortest distance from an end of the nozzle protrusion to the substrate is greater than 0 mm and less than 9 mm.

    SEMICONDUCTOR MANUFACTURING APPARATUS
    3.
    发明公开
    SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开

    公开(公告)号：US20240018657A1

    公开(公告)日：2024-01-18

    申请号：US18373364

    申请日：2023-09-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae Hyun YANG ,  Sang Yub IE ,  Tae Yong KIM ,  Phil Ouk NAM

    IPC: C23C16/455 ,  H01L21/67 ,  H01L21/673

    CPC classification number: C23C16/45578 ,  C23C16/45595 ,  C23C16/45546 ,  H01L21/67 ,  H01L21/673

    Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

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