公开(公告)号：US11670714B2

公开(公告)日：2023-06-06

申请号：US17338400

申请日：2021-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kilsu Jung ,  Jin-Hong Park ,  Keun Heo ,  Sungjun Kim

IPC: H01L29/78 ,  H01L29/267 ,  H01L29/51 ,  H01L29/76 ,  H01L29/45 ,  H10K10/84 ,  H10K10/46

CPC classification number: H01L29/78391 ,  H01L29/267 ,  H01L29/45 ,  H01L29/516 ,  H01L29/7606 ,  H10K10/466 ,  H10K10/472 ,  H10K10/84

Abstract: A negative differential resistance device includes a dielectric layer having a first surface and a second surface opposing the first surface, a first semiconductor layer that includes a first degenerated layer that is on the first surface of the dielectric layer and has a first polarity, a second semiconductor layer that includes a second degenerated layer that has a region that overlaps the first semiconductor layer and has a second polarity, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a third electrode on the second surface of the dielectric layer and which has a region overlapping at least one of the first semiconductor layer or the second semiconductor layer.

公开(公告)号：US12206021B2

公开(公告)日：2025-01-21

申请号：US18307914

申请日：2023-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kilsu Jung ,  Jin-Hong Park ,  Keun Heo ,  Sungjun Kim

IPC: H01L29/78 ,  H01L29/267 ,  H01L29/45 ,  H01L29/51 ,  H01L29/76 ,  H10K10/46 ,  H10K10/84

Abstract: A negative differential resistance device includes a dielectric layer having a first surface and a second surface opposing the first surface, a first semiconductor layer that includes a first degenerated layer that is on the first surface of the dielectric layer and has a first polarity, a second semiconductor layer that includes a second degenerated layer that has a region that overlaps the first semiconductor layer and has a second polarity, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a third electrode on the second surface of the dielectric layer and which has a region overlapping at least one of the first semiconductor layer or the second semiconductor layer.

公开(公告)号：US11922298B2

公开(公告)日：2024-03-05

申请号：US16858823

申请日：2020-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhong Park ,  Sungjun Kim ,  Keun Heo ,  Hyeongjun Kim ,  Seyong Oh

IPC: G06N3/065 ,  G11C11/54

CPC classification number: G06N3/065 ,  G11C11/54

Abstract: A neuron device is described. The neuron device is based on spontaneous polarization switching which includes a plurality of gate electrodes, a plurality of drain electrodes, a plurality of source lines, a dielectric layer, and a semiconductor layer. The gate electrodes are arranged parallel to each other. The drain electrodes are arranged parallel to each other. The source lines are arranged between the gate electrodes and the drain electrodes and parallel to each other. The dielectric layer is formed at intersections between the gate electrodes and the source lines. The semiconductor layer is formed at intersections between the drain electrodes and the source electrodes. The drain electrodes function as synapse-after-neuron linking terminals. The gate electrodes adjust an arrangement direction of electrical dipoles of the dielectric layer to control a firing time point and a firing height of the neuron device.

公开(公告)号：US12230651B2

公开(公告)日：2025-02-18

申请号：US17668566

申请日：2022-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungjun Kim ,  Jin-Hong Park ,  Sunghun Lee ,  Keun Heo

IPC: H01L27/14 ,  H01L27/146

Abstract: A photodetector includes a gate electrode extending in a first direction, a ferroelectric layer on the gate electrode and maintaining a state of polarization formed by a gate voltage applied to the gate electrode, a light absorbing layer on the ferroelectric layer and extending in a second direction intersecting the gate electrode, the light absorbing layer including a two-dimensional (2D) material of a layered structure, a source electrode on the ferroelectric layer and connected to a first end of the light absorbing layer, and a drain electrode on the ferroelectric layer and connected to the a second end of the light absorbing layer.