公开(公告)号：US12206021B2

公开(公告)日：2025-01-21

申请号：US18307914

申请日：2023-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kilsu Jung ,  Jin-Hong Park ,  Keun Heo ,  Sungjun Kim

IPC: H01L29/78 ,  H01L29/267 ,  H01L29/45 ,  H01L29/51 ,  H01L29/76 ,  H10K10/46 ,  H10K10/84

Abstract: A negative differential resistance device includes a dielectric layer having a first surface and a second surface opposing the first surface, a first semiconductor layer that includes a first degenerated layer that is on the first surface of the dielectric layer and has a first polarity, a second semiconductor layer that includes a second degenerated layer that has a region that overlaps the first semiconductor layer and has a second polarity, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a third electrode on the second surface of the dielectric layer and which has a region overlapping at least one of the first semiconductor layer or the second semiconductor layer.

公开(公告)号：US11670714B2

公开(公告)日：2023-06-06

申请号：US17338400

申请日：2021-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kilsu Jung ,  Jin-Hong Park ,  Keun Heo ,  Sungjun Kim

IPC: H01L29/78 ,  H01L29/267 ,  H01L29/51 ,  H01L29/76 ,  H01L29/45 ,  H10K10/84 ,  H10K10/46

CPC classification number: H01L29/78391 ,  H01L29/267 ,  H01L29/45 ,  H01L29/516 ,  H01L29/7606 ,  H10K10/466 ,  H10K10/472 ,  H10K10/84

Abstract: A negative differential resistance device includes a dielectric layer having a first surface and a second surface opposing the first surface, a first semiconductor layer that includes a first degenerated layer that is on the first surface of the dielectric layer and has a first polarity, a second semiconductor layer that includes a second degenerated layer that has a region that overlaps the first semiconductor layer and has a second polarity, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a third electrode on the second surface of the dielectric layer and which has a region overlapping at least one of the first semiconductor layer or the second semiconductor layer.