公开(公告)号：US09412429B2

公开(公告)日：2016-08-09

申请号：US14571418

申请日：2014-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Chul Chun ,  Chul-Sung Park

IPC: G11C5/14 ,  G11C8/08 ,  G11C8/10 ,  G11C8/12 ,  G11C11/4074 ,  G11C11/4091 ,  G11C11/408

CPC classification number: G11C8/08 ,  G11C5/147 ,  G11C8/10 ,  G11C8/12 ,  G11C11/4074 ,  G11C11/4085 ,  G11C11/4091

Abstract: A semiconductor memory device includes multiple voltage generators. The memory device includes a first voltage generator for generating a first internal voltage based on a first power supply voltage, and a second voltage generator for generating a second internal voltage based on a second power supply voltage that is lower than the first power supply voltage. The first internal voltage is used as a driving voltage of a bit line sense amplifier in a core block including a memory cell array. The second internal voltage that is lower than the first internal voltage is used as a driving voltage of a peripheral circuit block other than the core block.

Abstract translation: 半导体存储器件包括多个电压发生器。 存储装置包括用于基于第一电源电压产生第一内部电压的第一电压发生器和用于基于低于第一电源电压的第二电源电压产生第二内部电压的第二电压发生器。 第一内部电压被用作包括存储单元阵列的核心块中的位线读出放大器的驱动电压。 低于第一内部电压的第二内部电压被用作除核心块之外的外围电路块的驱动电压。