公开(公告)号：US20170140937A1

公开(公告)日：2017-05-18

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong SUNG ,  Sejin OH ,  Je-Hun WOO ,  Hyunju LEE ,  Seungkyu LIM ,  Kiho HWANG

IPC: H01L21/263 ,  H01L21/66 ,  H01L21/683

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

公开(公告)号：US20160379802A1

公开(公告)日：2016-12-29

申请号：US15161432

申请日：2016-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Dougyong SUNG ,  Kiho HWANG ,  Yun-Kwang JEON

IPC: H01J37/32 ,  G01J1/04 ,  G01J1/42 ,  C23C16/50 ,  C23C16/52

CPC classification number: G01J1/0407 ,  C23C16/50 ,  C23C16/52 ,  G01J1/0295 ,  G01J1/0422 ,  G01J1/0492 ,  G01J1/10 ,  G01J1/22 ,  G01J1/26 ,  G01J1/429 ,  G01J2001/242 ,  H01J37/32935 ,  H01J37/32972 ,  H01J37/3299

Abstract: An apparatus for monitoring vacuum ultraviolet, the apparatus including a light controller including a slit, the slit to transmit plasma emission light emitted from a process chamber in which a plasma process is performed on a substrate; a light selector adjacent to the light controller, the light selector selectively to transmit light, having a predetermined wavelength band, of the plasma emission light passing through the slit; a light collector to concentrate the light selectively transmitted by the light selector; and a detector to detect the light concentrated by the light collector, the light selectively transmitted by the light selector being vacuum ultraviolet.

Abstract translation: 一种用于监测真空紫外线的装置，该装置包括具有狭缝的光控制器，该狭缝用于传输从其中在基板上执行等离子体处理的处理室发射的等离子体发射光; 与所述光控制器相邻的光选择器，所述光选择器选择性地透射通过所述狭缝的等离子体发射光的具有预定波长带的光; 集光器，用于集中由选择器选择性地传输的光; 以及检测器，用于检测由光收集器集中的光，由选择器选择性地透射的光是真空紫外线。