公开(公告)号：US20240321366A1

公开(公告)日：2024-09-26

申请号：US18734833

申请日：2024-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kun-Woo Song ,  Jonghwa Kim ,  Kyungyong Jeoung

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  H10B43/27

CPC classification number: G11C16/3431 ,  G11C16/0483 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  H10B43/27

Abstract: Disclosed is a storage device, which includes a nonvolatile memory device including a first memory block connected with a plurality of first word lines, and a memory controller connected with the nonvolatile memory device through a plurality of data lines. The memory controller sends a first command to the nonvolatile memory device through the plurality of data lines during a first command input period, sends a parameter to the nonvolatile memory device through the plurality of data lines during an address input period, and sends a second command to the nonvolatile memory device through the plurality of data lines during a second command input period. The nonvolatile memory device applies a turn-on voltage to all the plurality of first word lines connected with the first memory block based on the parameter during a first time in response to the first command and the second command.

公开(公告)号：US12020758B2

公开(公告)日：2024-06-25

申请号：US17318597

申请日：2021-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kun-Woo Song ,  Jonghwa Kim ,  Kyungyong Jeoung

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  H10B43/27

CPC classification number: G11C16/3431 ,  G11C16/0483 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  H10B43/27

Abstract: Disclosed is a storage device, which includes a nonvolatile memory device including a first memory block connected with a plurality of first word lines, and a memory controller connected with the nonvolatile memory device through a plurality of data lines. The memory controller sends a first command to the nonvolatile memory device through the plurality of data lines during a first command input period, sends a parameter to the nonvolatile memory device through the plurality of data lines during an address input period, and sends a second command to the nonvolatile memory device through the plurality of data lines during a second command input period. The nonvolatile memory device applies a turn-on voltage to all the plurality of first word lines connected with the first memory block based on the parameter during a first time in response to the first command and the second command.