公开(公告)号：US09607853B2

公开(公告)日：2017-03-28

申请号：US14656235

申请日：2015-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-yub Jeon ,  Dong-chan Kim ,  Gyung-jin Min ,  Jae-hong Park ,  Je-woo Han

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/31144 ,  H01L21/02107 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76898

Abstract: A patterning method using a metal mask includes sequentially forming a lower metal layer and an upper metal layer on an etching object layer, forming an upper metal mask, forming the upper metal mask including patterning the upper metal layer, forming a lower metal mask, forming the lower metal mask including patterning the lower metal layer using the upper metal mask, and patterning the etching object layer using the upper metal mask.