公开(公告)号：US20230257409A1

公开(公告)日：2023-08-17

申请号：US18139053

申请日：2023-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung LEE ,  Hiroshi NIHEI ,  Masashi SHIRAI ,  Jaesoon LIM ,  Younjoung CHO

IPC: C07F15/06 ,  H01L21/285 ,  C23C16/18 ,  C23C16/44 ,  C23C16/02 ,  H01L21/768 ,  C23C16/04

CPC classification number: C07F15/065 ,  H01L21/28562 ,  H01L21/28568 ,  C23C16/18 ,  C23C16/4408 ,  C23C16/0227 ,  H01L21/76849 ,  C23C16/0209 ,  C23C16/04

Abstract: A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

公开(公告)号：US20210032279A1

公开(公告)日：2021-02-04

申请号：US16872504

申请日：2020-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung LEE ,  Hiroshi NIHEI ,  Masashi SHIRAI ,  Jaesoon LIM ,  Younjoung CHO

IPC: C07F15/06 ,  H01L21/285 ,  H01L21/768 ,  C23C16/44 ,  C23C16/02 ,  C23C16/18

Abstract: A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,