公开(公告)号：US20240161807A1

公开(公告)日：2024-05-16

申请号：US18234157

申请日：2023-08-15

Applicant: SAMSUNG ELECTRONICS CO. LTD.

Inventor： Junha HWANG ,  Youngbin lee ,  Kangil Kim ,  Saemi Song ,  Kiseok Oh ,  Doohee Hwang

IPC: G11C11/406 ,  G11C29/52

CPC classification number: G11C11/40622 ,  G11C11/40615 ,  G11C29/52

Abstract: A memory device is provided. The memory device includes: a memory cell array including a plurality of memory cell rows; a refresh control circuit configured to output a refresh row address to control a refresh operation to be performed on at least one memory cell row among the plurality of memory cell rows; and a control logic circuit configured to receive, from a memory controller, error check and scrub (ECS) setting data corresponding to a mode among a plurality of modes, store the ECS setting data in a mode register, and provide a target row address of a memory cell row to be refreshed to the refresh control circuit based on a value of the ECS setting data in response to a refresh command provided from the memory controller.

公开(公告)号：US11804254B2

公开(公告)日：2023-10-31

申请号：US17529900

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Saemi Song ,  Dokyun Kim ,  Yeonkyu Choi ,  Doohee Hwang

IPC: G11C11/406

CPC classification number: G11C11/40626 ,  G11C11/40615 ,  G11C11/40622

Abstract: Provided are a memory device and a method of refreshing the memory device regardless of a refresh rate multiplier for a temperature. In response to a refresh command at each base refresh rate (tREFi) based on a measured temperature, a memory device refreshes M memory cell rows at room temperature, refreshes 2M memory cell rows at a high temperature, and refreshes (½)M memory cell rows at a low temperature. The memory device refreshes (n+1)*M memory cell rows at a base refresh rate tREFi in response to a refresh command applied after n skipped base refresh rates, and refreshes (n+1)*M memory cell rows at a base refresh rate tREFi in response to a pulling-in refresh command.