Memory device and method of refreshing memory device based on temperature

    公开(公告)号:US11804254B2

    公开(公告)日:2023-10-31

    申请号:US17529900

    申请日:2021-11-18

    CPC classification number: G11C11/40626 G11C11/40615 G11C11/40622

    Abstract: Provided are a memory device and a method of refreshing the memory device regardless of a refresh rate multiplier for a temperature. In response to a refresh command at each base refresh rate (tREFi) based on a measured temperature, a memory device refreshes M memory cell rows at room temperature, refreshes 2M memory cell rows at a high temperature, and refreshes (½)M memory cell rows at a low temperature. The memory device refreshes (n+1)*M memory cell rows at a base refresh rate tREFi in response to a refresh command applied after n skipped base refresh rates, and refreshes (n+1)*M memory cell rows at a base refresh rate tREFi in response to a pulling-in refresh command.

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