公开(公告)号：US20240321774A1

公开(公告)日：2024-09-26

申请号：US18399519

申请日：2023-12-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kitae Park ,  Chiwan Song ,  Seonkyu Kim ,  Hyunna Bae ,  Seungmin Baek ,  Yongjae Song ,  Joonseok Oh ,  Jaewook Jung ,  Seokil Hong

IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L21/3205 ,  H01L23/31 ,  H01L23/492 ,  H01L25/065 ,  H10B80/00

CPC分类号： H01L23/562 ,  H01L21/0214 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/32055 ,  H01L23/3135 ,  H01L23/4926 ,  H01L24/48 ,  H01L25/0657 ,  H10B80/00 ,  H01L2224/48149 ,  H01L2224/48227 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2924/3511 ,  H01L2924/3512

摘要： The present disclosure relates to semiconductor devices and semiconductor packages. One example semiconductor device includes a crystalline silicon layer, an amorphous silicon layer on the crystalline silicon layer and extending along a first surface of the crystalline silicon layer, and a dielectric layer on the amorphous silicon layer and extending along a surface of the amorphous silicon layer. The dielectric layer includes silicon oxynitride and has compressive stress.