公开(公告)号：US09870833B2

公开(公告)日：2018-01-16

申请号：US15425557

申请日：2017-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bongsoon Lim ,  Seokmin Yoon ,  Sang-Won Shim

IPC: G11C16/04 ,  G11C16/34 ,  G11C16/26 ,  G11C16/10 ,  G11C16/08 ,  G06F11/20

CPC classification number: G11C16/3459 ,  G06F11/2094 ,  G11C7/106 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26

Abstract: A nonvolatile memory device may include a cell array, a first page buffer, and a second page buffer. The first page buffer may be connected to a first memory cell of the cell array and may store first sensing data generated by sensing whether a program operation of the first memory cell is completed during a program verify operation. The second page buffer may be connected to a second memory cell of the cell array. During the program verify operation, the second page buffer may generate and store first verify data based on second sensing data generated by sensing whether a program operation of the second memory cell is completed, may receive the first sensing data from the first page buffer, and may store second verify data generated by accumulating the first sensing data and the first verify data.