公开(公告)号：US20170194426A1

公开(公告)日：2017-07-06

申请号：US15292515

申请日：2016-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Seok MIN ,  Mi Gyeong GWON ,  Seong Jin NAM ,  Sug Hyun SUNG ,  Young Hoon SONG ,  Young Mook OH

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/762 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L29/0653 ,  H01J37/32192 ,  H01L21/31116 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823431 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7848 ,  H01L29/7851 ,  H01L29/7853

Abstract: Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first fin and the second fin. The field insulation layer include a first insulation layer and a second insulation layer on the first insulation layer and connected to the first insulation layer. The second insulation layer is wider than the first insulation layer. A ratio of a top width to a bottom width of each of the first fin and the second fin exceeds 0.5.